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regarding the change of names mentioned in the document, such as hitachi electric and hitachi xx, to renesas technology corp. the semiconductor operations of mitsubishi electric and hitachi were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although hitachi, hitachi, ltd., hitachi semiconductors, and other hitachi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. renesas technology home page: http://www.renesas.com renesas technology corp. customer support dept. april 1, 2003 to all our customers
cautions keep safety first in your circuit designs! 1. renesas technology corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corporation or a third party. 2. renesas technology corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corporation or an authorized renesas technology corporation product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corporation by various means, including the renesas technology corporation semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corporation or an authorized renesas technology corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corporation is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corporation for further details on these materials or the products contained therein.
HD74CBTS16212A 24-bit fet bus-exchange switches with schottky diode clamping ade-205-680 (z) preliminary rev. 0 feb. 2002 description the HD74CBTS16212A devices provide 24-bits of high speed ttl-compatible bus switching or exchanging. the low on state resistance of the switch allows connections to be made with minimal propagation delay. each device operates as a 24-bit bus switch or a 12-bit bus exchanger that provides data exchanging between the four signal ports via the data-select (s0, s1, s2) terminals. features ? minimal propagation delay through the switch. ? 5 ? switch connection between two ports. ? ttl-compatible input levels. ? ultra low quiescent power. -ideally suited for notebook applications. ? package type product code example: HD74CBTS16212Atel package type package code package suffix taping code tssop?56pin ttp?56dav t el(1,000pcs / reel)
HD74CBTS16212A rev.0, feb. 2002, page 2 of 2 function table inputs inputs / outputs s2 s1 s0 a1 a2 function l l l z z disconnect l l h b1 port z a1 port = b1 port l h l b2 port z a1 port = b2 port l h h z b1 port a2 port = b1 port h l l z b2 port a2 port = b2 port h l h z z disconnect h h l b1 port b2 port a1 port = b1 port a2 port = b2 port h h h b2 port b1 port a1 port = b2 port a2 port = b1 port h: high level l: low level z: high impedance
HD74CBTS16212A rev.0, feb. 2002, page 3 of 3 pin arrangement (top view) 1 2 3 4 5 6 7 8 9 10 s0 1a1 1a2 2a1 2a2 3a1 3a2 gnd 4a1 4a2 5a1 5a2 6a1 6a2 7a1 7a2 8a1 gnd 8a2 9a1 9a2 10a2 10a1 11 12 13 14 15 16 17 18 19 20 21 22 23 24 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 10b2 10b1 9b1 9b2 11a1 11a2 12a2 12a1 25 26 27 28 29 30 31 32 12b2 12b1 11b1 11b2 8b2 gnd 7b2 7b1 6b2 6b1 5b2 5b1 4b2 4b1 3b2 gnd 2b2 3b1 2b1 1b1 1b2 s2 8b1 v cc s1
HD74CBTS16212A rev.0, feb. 2002, page 4 of 4 absolute maximum ratings item symbol ratings unit conditions supply voltage range v cc ? 0.5 to 7.0 v input voltage range *1 v i ? 0.5 to 7.0 v input clamp current i ik ? 50 ma v i < 0 continuous output current i o 128 ma v o = 0 to v cc continuous current through v cc or gnd i cc or i gnd 100 ma maximum power dissipation at ta = 25 c (in still air) *2 p t 1.32 w storage temperature tstg ? 65 to 150 c notes: the absolute maximum ratings are values which must not individually be exceeded, and furthermore, no two of which may be realized at the same time. 1. the input and output voltage ratings may be exceeded even if the input and output clamp-current ratings are observed. 2. the maximum package power dissipation was calculated using a junction temperature of 150 c. recommended operating conditions item symbol min max unit conditions supply voltage range v cc 4.0 5.5 v input voltage range v i 0 5.5 v output voltage range v i/o 0 5.5 v input transition rise or fall rate ? t / ? v 0 5 ns / v v cc = 4.5 to 5.5 v operating free-air temperature ta ? 40 85 c note: unused or floating inputs must be held high or low.
HD74CBTS16212A rev.0, feb. 2002, page 5 of 5 block diagram s0 12b2 1 12a2 28 12a1 27 29 12b1 30 56 s1 55 s2 1b2 1a2 3 1a1 2 53 1b1 54 ? ? ? ? ? ?
HD74CBTS16212A rev.0, feb. 2002, page 6 of 6 dc electrical characteristics (ta = ? 40 to 85c) item symbol v cc (v) min typ *1 max unit test conditions clamp diode voltage v ik 4.5 ? ? ? 1.2 v i in = ? 18 ma v ih 4.0 to 5.5 2.0 ? ? input voltage v il 4.0 to 5.5 ? ? 0.8 v 4.0 ? 14 20 v in = 2.4 v, i in = 15 ma typ at v cc = 4.0 v 4.5 ? 4 7 v in = 0 v, i in = 64 ma 4.5 ? 4 7 v in = 0 v, i in = 30 ma on-state switch resistance *2 r on 4.5 ? 6 12 ? v in = 2.4 v, i in = 15 ma input current i in 0 to 5.5 ? ? 1.0 a v in = 5.5 v or gnd control inputs 5.5 ? 1.0 ? ? v o = gnd a or b off-state leakage current i oz 5.5 ? ? 20 a v o = 5.5 v a or b quiescent supply current i cc 5.5 ? ? 3 a v in = v cc or gnd, i o = 0 ma increase in i cc per input *3 ? i cc 5.5 ? ? 2.5 ma one input at 3.4 v, other inputs at v cc or gnd notes: for condition shown as min or max use the appropriate values under recommended operating conditions. 1. all typical values are at v cc = 5 v (unless otherwise noted), ta = 25 c. 2. measured by the voltage drop between the a and b terminals at the indicated current through the switch. on-state resistance is determined by the lower voltage of the two (a or b) terminals. 3. this is the increase in supply current for each input that is at the specified ttl voltage level rather than v cc or gnd.
HD74CBTS16212A rev.0, feb. 2002, page 7 of 7 capacitance (ta = 25 c) item symbol v cc (v) min typ max unit test conditions control input capacitance c in 5.0 ? 5 ? pf v in = 0 or 3 v input / output capacitance c i/o (off) 5.0 ? 11 ? pf v o = 0 or 3 v s0, s1, or s2 = v cc note: this parameter is determined by device characterization is not production tested. switching characteristics (ta = ? 40 to 85 c) ? v cc = 4.0 v item symbol min max unit test conditions from (input) to (output) propagation delay time *1 t plh t phl ? 0.35 ns c l = 50 pf r l = 500 ? a or b b or a propagation delay time t plh t phl ? 10.0 ns c l = 50 pf r l = 500 ? s a or b enable time t zh t zl ? 10.4 ns c l = 50 pf r l = 500 ? s a or b disable time t hz t lz ? 9.2 ns c l = 50 pf r l = 500 ? s a or b ? v cc = 5.0 0.5 v item symbol min max unit test conditions from (input) to (output) propagation delay time *1 t plh t phl ? 0.25 ns c l = 50 pf r l = 500 ? a or b b or a propagation delay time t plh t phl 1.5 9.1 ns c l = 50 pf r l = 500 ? s a or b enable time t zh t zl 1.5 9.7 ns c l = 50 pf r l = 500 ? s a or b disable time t hz t lz 1.5 8.8 ns c l = 50 pf r l = 500 ? s a or b note: 1. the propagation delay is the calculated rc time constant of the typical on-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).
HD74CBTS16212A rev.0, feb. 2002, page 8 of 8 test circuit open s1 c l = 50 pf *1 500 ? load circuit for outputs symbol t / t plh phl t / t zh hz t / t zl lz s1 open open 7 v 500 ? see under table gnd note: 1. c l includes probe and jig capacitance.
HD74CBTS16212A rev.0, feb. 2002, page 9 of 9 waveforms ? 1 input 10 % 1.5 v 1.5 v 90 % t r 90 % 3 v gnd 10 % t f output 1.5 v 1.5 v t plh v t phl oh v ol waveforms ? 2 waveform - b notes: 1. all input pulses are supplied by generators having the following characteristics : prr 10 mhz, z o = 50 ? , t r 2.5 ns, t f 2.5 ns. 2. waveform - a is for an output with internal conditions such that the output is low except when disabled by the output control. 3. waveform - b is for an output with internal conditions such that the output is high except when disabled by the output control. 4. the output are measured one at a time with one transition per measurement. waveform - a v oh v ol v + 0.3 v ol v - 0.3 v oh output control 10 % 10 % 1.5 v 1.5 v 90 % t f 90 % 3 v 3.5 v gnd gnd t r 1.5 v 1.5 v t hz t lz t zh t zl
HD74CBTS16212A rev.0, feb. 2002, page 10 of 10 package dimensions hitachi code jedec jeita mass (reference value) ttp-56dav ? ? 0.32 g *pd plating 0.08 m 0.10 *0.15 0.05 8.10 0.20 0.50 0.1 0.65 max 128 29 56 14.0 6.10 0? ? 8? 0.50 1.20 max 0.10 0.05 14.2 max 1.0 *0.19 0.05 as of july, 2001 unit: mm
HD74CBTS16212A rev.0, feb. 2002, page 11 of 11 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2002. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra ? e 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 5.0

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